射频电路设计:理论与应用(第2版)(英文版)
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品牌: Reinhold Ludwig(赖因霍尔德·路德维格)
基本信息·出版社：电子工业出版社
·页码：572 页
·出版日期：2010年01月
·ISBN：9787121100956
·条形码：9787121100956
·装帧：平装
·开本：16
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内容简介《射频电路设计:理论与应用(第2版)(英文版)》从低频电路理论到射频、微波电路理论的演化过程出发，讨论以低频电路理论为基础并结合高频电压、电流的波动特征来分析和设计射频、微波系统的方法——微波等效电路法，使不具备电磁场理论和微波技术背景的读者也能了解和掌握射频、微波电路的基本设计原则和方法。全书共10章，涵盖传输线、匹配器、滤波器、混频器、放大器和振荡器等主要射频微波系统单元的理论分析和设计问题及电路分析工具（圆图、网络参量和信号流图）。书中例题非常有实用价值。《射频电路设计:理论与应用(第2版)(英文版)》大多数电路都经过ADS仿真，并提供标准MATLAB计算程序。
目录
Chapter 1 Introduction 1
1.1 Importance of Radio Frequency Design 2
1.2 Dimensions and Units 5
1.3 Frequency Spectrum 7
1.4 RF Behavior of Passive Components 8
1.4.1 Resistors at High Frequency 13
1.4.2 Capacitors at High Frequency 15
1.4.3 Inductors at High Frequency 18
1.5 Chip Components and Circuit Board Considerations 20
1.5.1 Chip Resistors 20
1.5.2 Chip Capacitors 21
1.5.3 Surface-Mounted Inductors 22
1.6 RF Circuit Manufacturing Processes 22
1.7 Summary 25
Chapter 2 Transmission Line Analysis 33
2.1 Why Transmission Line Theory? 33
2.2 Examples of Transmission Lines 36
2.2.1 Two-Wire Lines 36
2.2.2 Coaxial Line 37
2.2.3 Microstrip Lines 37
2.3 Equivalent Circuit Representation 39
2.4 Theoretical Foundation 41
2.4.1 Basic Laws 41
2.5 Circuit Parameters for a Parallel-Plate Transmission Line 46
2.6 Summary of Different Line Configurations 49
2.7 General Transmission Line Equation 49
2.7.1 Kirchhoff Voltage and Current Law Representations 49
2.7.2 Traveling Voltage and Current Waves 53
2.7.3 Characteristic Impedance 53
2.7.4 Lossless Transmission Line Model 54
2.8 Microstrip Transmission Lines 54
2.9 Terminated Lossless Transmission Line 58
2.9.1 Voltage Reflection Coefficient 58
2.9.2 Propagation Constant and Phase Velocity 60
2.9.3 Standing Waves 60
2.10 Special Termination Conditions 63
2.10.1 Input Impedance of Terminated Lossless Line 63
2.10.2 Short-Circuit Terminated Transmission Line 64
2.10.3 Open-Circuited Transmission Line 66
2.10.4 Quarter-Wave Transmission Line 67
2.11 Sourced and Loaded Transmission Line 70
2.11.1 Phasor Representation of Source 70
2.11.2 Power Considerations for a Transmission Line 71
2.11.3 Input Impedance Matching 73
2.11.4 Return Loss and Insertion Loss 74
2.12 Summary 76
Chapter 3 The Smith Chart 83
3.1 From Reflection Coefficient to Load Impedance 83
3.1.1 Reflection Coefficient in Phasor Form 84
3.1.2 Normalized Impedance Equation 85
3.1.3 Parametric Reflection Coefficient Equation 86
3.1.4 Graphical Representation 89
3.2 Impedance Transformation 90
3.2.1 Impedance Transformation for General Load 90
3.2.2 Standing Wave Ratio 92
3.2.3 Special Transformation Conditions 93
3.2.4 Computer Simulations 97
3.3 Admittance Transformation 98
3.3.1 Parametric Admittance Equation 98
3.3.2 Additional Graphical Displays 101
3.4 Parallel and Series Connections 102
3.4.1 Parallel Connection of R and L Elements 102
3.4.2 Parallel Connection of R and C Elements 103
3.4.3 Series Connection of R and L Elements 103
3.4.4 Series Connection of R and C Elements 104
3.4.5 Example of a T-Network 105
3.5 Summary 109
Chapter 4 Single- and Multiport Networks 117
4.1 Basic Definitions 117
4.2 Interconnecting Networks 124
4.2.1 Series Connection of Networks 124
4.2.2 Parallel Connection of Networks 126
4.2.3 Cascading Networks 126
4.2.4 Summary of ABCD Network Representations 127
4.3 Network Properties and Applications 131
4.3.1 Interrelations between Parameter Sets 131
4.3.2 Analysis of Microwave Amplifier 132
4.4 Scattering Parameters 135
4.4.1 Definition of Scattering Parameters 136
4.4.2 Meaning of S-Parameters 138
4.4.3 Chain Scattering Matrix 140
4.4.4 Conversion between Z- and S-Parameters 142
4.4.5 Signal Flowgraph Modeling 143
4.4.6 Generalization of S-Parameters 148
4.4.7 Practical Measurements of S-Parameters 150
4.5 Summary 156
Chapter 5 An Overview of RF Filter Design 164
5.1 Basic Resonator and Filter Configurations 165
5.1.1 Filter Types and Parameters 165
5.1.2 Low-Pass Filter 168
5.1.3 High-Pass Filter 171
5.1.4 Bandpass and Bandstop Filters 172
5.1.5 Insertion Loss 177
5.2 Special Filter Realizations 180
5.2.1 Butterworth-Type Filters 180
5.2.2 Chebyshev-Type Filters 183
5.2.3 Denormalization of Standard Low-Pass Design 188
5.3 Filter Implementation 196
5.3.1 Unit Elements 197
5.3.2 Kuroda誷 Identities 198
5.3.3 Examples of Microstrip Filter Design 199
5.4 Coupled Filter 206
5.4.1 Odd and Even Mode Excitation 206
5.4.2 Bandpass Filter Section 209
5.4.3 Cascading Bandpass Filter Elements 210
5.4.4 Design Example 211
5.5 Summary 215
Chapter 6 Active RF Components 223
6.1 Semiconductor Basics 224
6.1.1 Physical Properties of Semiconductors 224
6.1.2 The pn-Junction 229
6.1.3 Schottky Contact 236
6.2 RF Diodes 239
6.2.1 Schottky Diode 239
6.2.2 PIN Diode 242
6.2.3 Varactor Diode 246
6.2.4 IMPATT Diode 248
6.2.5 Tunnel Diode 250
6.2.6 TRAPATT, BARRITT, and Gunn Diodes 251
6.3 Bipolar-Junction Transistor 252
6.3.1 Construction 252
6.3.2 Functionality 254
6.3.3 Frequency Response 259
6.3.4 Temperature Behavior 261
6.3.5 Limiting Values 264
6.3.6 Noise Performance 265
6.4 RF Field Effect Transistors 266
6.4.1 Construction 266
6.4.2 Functionality 267
6.4.3 Frequency Response 272
6.4.4 Limiting Values 272
6.5 Metal Oxide Semiconductor Transistors 273
6.5.1 Construction 273
6.5.2 Functionality 274
6.6 High Electron Mobility Transistors 275
6.6.1 Construction 276
6.6.2 Functionality 276
6.6.3 Frequency Response 279
6.7 Semiconductor Technology Trends 279
6.8 Summary 284
Chapter 7 Active RF Component Modeling 290
7.1 Diode Models 290
7.1.1 Nonlinear Diode Model 290
7.1.2 Linear Diode Model 293
7.2 Transistor Models 295
7.2.1 Large-Signal BJT Models 295
7.2.2 Small-Signal BJT Models 301
7.2.3 Large-Signal FET Models 311
7.2.4 Small-Signal FET Models 314
7.2.5 Transistor Amplifier Topologies 317
7.3 Measurement of Active Devices 318
7.3.1 DC Characterization of Bipolar Transistor 318
7.3.2 Measurements of AC Parameters of Bipolar Transistors 320
7.3.3 Measurements of Field Effect Transistor Parameters 323
7.4 Scattering Parameter Device Characterization 325
7.5 Summary 332
Chapter 8 Matching and Biasing Networks 338
8.1 Impedance Matching Using Discrete Components 338
8.1.1 Two-Component Matching Networks 338
8.1.2 Forbidden Regions, Frequency Response, and Quality Factor 346
8.1.3 T and Pi Matching Networks 354
8.2 Microstrip Line Matching Networks 357
8.2.1 From Discrete Components to Microstrip Lines 357
8.2.2 Single-Stub Matching Networks 360
8.2.3 Double-Stub Matching Networks 364
8.3 Amplifier Classes of Operation and Biasing Networks 366
8.3.1 Classes of Operation and Efficiency of Amplifiers 367
8.3.2 Bipolar Transistor Biasing Networks 371
8.3.3 Field Effect Transistor Biasing Networks 376
8.4 Summary 382
Chapter 9 RF Transistor Amplifier Design 387
9.1 Characteristics of Amplifiers 387
9.2 Amplifier Power Relations 388
9.2.1 RF Source 388
9.2.2 Transducer Power Gain 389
9.2.3 Additional Power Relations 390
9.3 Stability Considerations 392
9.3.1 Stability Circles 392
9.3.2 Unconditional Stability 395
9.3.3 Stabilization Methods 400
9.4 Constant Gain 402
9.4.1 Unilateral Design 402
9.4.2 Unilateral Figure of Merit 407
9.4.3 Bilateral Design 408
9.4.4 Operating and Available Power Gain Circles 411
9.5 Noise Figure Circles 416
9.6 Constant VSWR Circles 419
9.7 Broadband, High-Power, and Multistage Amplifiers 423
9.7.1 Broadband Amplifiers 423
9.7.2 High-Power Amplifiers 431
9.7.3 Multistage Amplifiers 434
9.8 Summary 440
Chapter 10 Oscillators and Mixers 446
10.1 Basic Oscillator Models 447
10.1.1 Feedback Oscillator 447
10.1.2 Negative Resistance Oscillator 448
10.1.3 Oscillator Phase Noise 458
10.1.4 Feedback Oscillator Design 463
10.1.5 Design Steps 465
10.1.6 Quartz Oscillators 468
10.2 High-Frequency Oscillator Configuration 470
10.2.1 Fixed-Frequency Oscillators 473
10.2.2 Dielectric Resonator Oscillators 478
10.2.3 YIG-Tuned Oscillator 482
10.2.4 Voltage-Controlled Oscillator 483
10.2.5 Gunn Element Oscillator 485
10.3 Basic Characteristics of Mixers 486
10.3.1 Basic Concepts 487
10.3.2 Frequency Domain Considerations 489
10.3.3 Single-Ended Mixer Design 490
10.3.4 Single-Balanced Mixer 497
10.3.5 Double-Balanced Mixer 498
10.3.6 Integrated Active Mixers 498
10.3.7 Image Reject Mixer 502
10.4 Summary 512
Appendix A Useful Physical Quantities and Units 517
Appendix B Skin Equation for a Cylindrical Conductor 522
Appendix C Complex Numbers 525
Appendix D Matrix Conversions 527
Appendix E Physical Parameters of Semiconductors 530
Appendix F Long and Short Diode Models 531
Appendix G Couplers 534
Appendix H Noise Analysis 540
Appendix I Introduction to MATLAB 549
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序言High-frequency circuit design continues to enjoy significant industrial attention, triggered by a host of radio-frequency (RF) and microwave (MW) products. Improved semiconductor devices, new board materials, and advanced fabrication technologies have made possible a proliferation of high-speed digital and analog systems that profoundly influence wireless communication, global positioning, radar, remote sensing, and related electrical and computer engineering disciplines. As a consequence, this interest has translated into market demands for trained engineers and professionals with knowledge of high-frequency circuit design principles. Since the publication of the first edition of this textbook in January, 2000, the need for well-educated RF professionals has surged, making a text that teaches the fundamentals of high-frequency circuits even timelier. The objective of this second edition remains the same: to present the fundamental RF design aspects and the underlying distributed circuit theory with minimal emphasis on electromagnetics. We have written this book in a manner that requires no EM background beyond a first year undergraduate physics course in fields and waves. Students and practicing engineers equipped with rudimentary exposure to circuit theory and/or microelectronics can read this book and grasp the entire spectrum of high-frequency circuit principles involving passive and active discrete devices, transmission lines, filters, amplifiers, mixers, oscillators and their design procedures. Lengthy mathematical derivations are either relegated to the appendices or placed in examples, thereby separating dry theoretical details from the main text. Although de-emphasizing theory creates a certain loss in precision, it promotes readability and focus on the underlying circuit concepts. What has changed from the first edition? Besides our obvious attempt to eliminate typos and inconsistencies, the second edition was improved in several important ways. First, we have added Practically Speaking sections at the end of each chapter. In these sections, key design concepts and measurement procedures are discussed in detail. Topics such as the construction of an attenuator, a microstrip filter, or the simulation of a low noise RF amplifier with bias and matching networks, are presented similarly to a lab component that accompanies the lectures. Equipped with the right instrumentation and software simulator, the reader can easily replicate the circuits. Second, topics of interest, helpful definitions, and noteworthy observations are placed on the margins and offset from the main text. In addition to highlighting their importance, this approach allows us to emphasize and better explain items that do not directly fit into the flow of the main text. For example, the coverage of a Phase Lock Loop (PLL) system would exceed the scope of this book. However, a brief explanation of a PLL provides context and extra motivation for the underlying high-frequency circuits. It furthermore inspires the readers to explore these topics on their own. Third, more emphasis is placed on nonlinear design principles, specifically in regard to oscillators and their associated resonator circuits. Accepting the challenge to deliver a high degree of linear and nonlinear design experience, we have included a number of examples that analyze in considerable depth, often extending over several pages, the philosophy and the intricacies of various modeling approaches. While linear scattering parameter simulations are adequate under certain conditions, nonlinear simulations, for instance the harmonic balance analysis, are required for more sophisticated designs. Oscillator and mixer, as well as amplifier designs can greatly benefit from a nonlinear circuit simulation. Naturally, the use of appropriate simulation tools creates problems in terms of their capabilities, accuracies, speeds, and not least costs. The availability of circuit simulators and RF software tools has steadily increased over the years. Indeed, the authors are routinely contacted about simulators that offer exceptional?performances under particular constraints. It is not our goal to render an assessment or endorsement of a specific simulator (the authors have no commercial, nor professional ties with any vendor). In general, professional high-frequency simulators are expensive and require familiarity to use them effectively. Several years ago, the ECE department at WPI decided after an extensive review to adopt Advanced Design Systems (ADS) of Agilent Technologies as the default high-frequency circuit simulator for its undergraduate and graduate electrical and computer engineering students. For this reason, and because of its wide-spread industrial use, we rely on ADS simulations for most of our circuits. However, for readers without access to commercial simulators, we created a number of standard MATLAB M-files that can be downloaded from our website listed in Appendix G. Because MATLAB is a popular and relatively inexpensive mathematical tool, many examples discussed in this book can be executed and the results graphically displayed in a matter of seconds. Specifically, the various Smith Chart computations of impedance transformations should appeal to the reader. Since our goal focuses on circuits, the textbook purposely omitted high-speed digital circuits as well as coding and modulation aspects. Although important, these topics would require too many additional pages and would move the book too far away from its original intent of providing a fundamental, one- or two-semester introduction to RF circuit design. In the ECE department at WPI, this does not constitute a disadvantage, as most of these topics are taught in specialized communication systems engineering courses. The organization of this text is as follows: Chapter 1 presents a general explanation of why basic circuit theory needs to be modified as the operating frequency is increased to a level where the wavelength becomes comparable with circuit dimensions. Chapter 2 then develops the fundamental concepts of distributed circuit theory. Chapter 3 introduces the Smith Chart as a generic tool for dealing with the periodic impedance behavior on the basis of the reflection coefficient. Chapter 4 presents networks and flow-graph representations, and how the terminal conditions can be described with so-called scattering parameters. The network models and their scattering parameter descriptions are utilized in Chapter 5 to develop passive RF filter configurations. To address active devices, Chapter 6 provides a review of key semiconductor fundamentals, followed by their circuit models representation in Chapter 7. The impedance matching and biasing of bipolar and field effect transistors is taken up in Chapter 8. Chapter 9 focuses on a number of key high-frequency amplifier configurations and their design intricacies, ranging from low noise to high power applications. Finally, Chapter 10 introduces the reader to nonlinear systems and their design, covering oscillator and mixer circuits. This book is used in the ECE department at WPI as a required text for its standard 7-week (5 lecture hours per week) course in RF circuit design (ECE 3113, Introduction to RF Circuit Design). The course has primarily attracted an audience of 3rd and 4th year undergraduate students with a background in microelectronics. The course does not include a separate laboratory, although a total of six practical circuits (all part of the Practically Speaking sections) are presented to the students who are then instructed to conduct their own measurements with a network analyzer. In addition, ADS simulations are incorporated as part of the regular lectures. Each chapter is self-contained, with the goal of providing wide flexibility in organizing the course material. At WPI, the content of approximately one three semester hour course is compressed into a 7-week period (consisting of a total of 28-29 lectures). The topics covered in ECE 3113 are shown in the table below. EE 3113, Introduction to RF Circuit Design Chapter 1, Introduction Sections 1.1-1.6 Chapter 2, Transmission Line Analysis Sections 2.1-2.12 Chapter 3, Smith Chart Sections 3.1-3.5 Chapter 4, Single- and Multi-Port Networks Sections 4.1-4.5 Chapter 7, Active RF Component Modeling Sections 7.1-7.2 Chapter 8, Matching and Biasing Networks Sections 8.1-8.4 Chapter 9, RF Transistor Amplifier Designs Sections 9.1-9.4 The remaining material is targeted for a second (7-week) term covering more advanced topics such as microwave filters, equivalent circuit models, oscillators and mixers. An organizational plan is provided below. Advanced Principles of RF Circuit Design Chapter 5, A Brief Overview of RF Filter Design Sections 5.1-5.5 Chapter 6, Active RF Components Sections 6.1-6.6 Chapter 7, Active RF Component Modeling Sections 7.3-7.5 Chapter 9, RF Transistor Amplifier Designs Sections 9.5-9.8 Chapter 10, Oscillators and Mixers Sections 10.1-10.4 Obviously, the entire course organization remains subject to change depending on total classroom time, student background, and interface requirements with related courses. At the writing of this 2nd edition, a new graduate course is being designed that combines the advanced RF circuit topics of Chapters 5-10 with a classical graduate-level electromagnetics text. Pearson offers many different products around the world to facilitate learning. In countries outside the United States, some products and services related to this textbook may not be available due to copyright and/or permissions restrictions. If you have questions, you can contact your local office by visiting www.pearsonhighered.com/international or you can contact your local Pearson representative.
ACKNOWLEDGEMENTS
The authors are grateful to a number of colleagues, students, and practicing engineers. Prof. Fred Looft, head of the ECE department, was instrumental in providing departmental funding for the networked ADS simulator resources and the recently acquired network analyzers. Our thanks go to Korn?Vennema and Scott Blum of NXP (formerly Philips Semiconductors) for providing technical RF expertise, sponsoring student projects, and making available measurement equipment. Professor Sergey N. Makarov added assistance through technical discussions. Brian Foley, Peter Serano, Shaileshkumar Raval, Dr. Rostislav Lemdiasov, Aghogho Obi, Souheil Benzerrouk, Dr. Funan Shi are current and former graduate students who provided insight, sometimes a fresh view, and always much appreciated ambience and support in the Center for Imaging and Sensing (CIS) at WPI. The authors are particularly grateful to Prof. Diran Apelian, director of the Metal Processing Institute at WPI, and Scott Biederman of GM for introducing them to the importance of microwave imaging and RF principles in material processing. R. L. would like to acknowledge his former co-author Dr. Pavel Bretchko; his brilliant effort and hard work helped shape the original text and laid the foundation of this second edition. Tom Robbins, the publisher of the first edition, is thanked for his constant support and editorial insight over the past 7 years. It is professionals like Mr. Robbins to whom the academic publishing industry owes its existence. The staff of Prentice Hall, specifically Alice Dworkin, Rose Kernan, and G. Muthukumar, Senior Project Manager, Laserwords Private Limited, Chennai, India, are thanked for their support in making this book project a reality.
